Production of ordered silicon nanocrystals by low-energy ion sputtering
نویسندگان
چکیده
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si ~100! substrate with 1.2 keV Ar ions at normal incidence. Atomic force and high-resolution transmission electron microscopies show that the silicon structures are crystalline, display homogeneous height, and spontaneously arrange into short-range hexagonal ordering. Under prolonged irradiation ~up to 16 h! all dot characteristics remain largely unchanged and a small corrugation develops at long wavelengths. We interpret the formation of the dots as a result of an instability due to the sputtering yield dependence on the local surface curvature. © 2001 American Institute of Physics. @DOI: 10.1063/1.1372358#
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